publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 16hhf1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w description RD16HHF1 is a mos fet type transistor specifically designed for hf rf power amplifiers applications. features high power g ain: p out> 16 w, gp>1 6 db @vdd=12.5v,f= 30 mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant RD16HHF1 - 101 is a rohs compliant products. rohs compliance is indicate by the letter ? g ? after the lot marking. thi s product include the lead in high melting temperature type solders. however, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders(i.e.tin - lead solder alloys containing more than85% lead.) outline drawing note: torelance of no designation means typical value. dimension in mm. 0.5+0.10/-0.15 pins 1:gate 2:source 3:drain 1.3+/-0.4 1 2 . 3 m i n 2 . 5 9.5max 5deg 2 . 5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3.6+/-0.2 0.8+0.10/-0.15 1.2+/-0.4 2 9.1+/-0.7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 2 abs olute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 50 v v gss gate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 56.8 w pin input power zg=zl=50 ? 0.8 w id drain to source current - 5 a t ch channel temperature - 150 c tstg storage temperature - - 40 to +1 50 c rth j - c thermal resistance junction to case 2.2 c/w note 1: above parameters are guaranteed independently. electrical characteristics (tc= 25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate threshold v oltage v ds =1 2 v, i ds =1ma 1.7 - 4.7 v pout output power v dd =12.5v, pin= 0.4 w, 16 19 - w ? d drain efficiency f= 3 0mhz , idq=0.5a 55 65 - % load vswr tolerance v dd =15.2v,po=16w(pin control) f=30mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ra tings , limits and conditions are subject to change.
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 3 typical characteristics channnel dissipation vs. ambient temperature 0 20 40 60 80 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) ta=+25c f=1mhz ta=+25c f=1mhz vgs-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vgs(v) i d s ( a ) vds=10v ta=+25c vds vs. crss characteristics 0 2 4 6 8 10 0 10 20 30 vds(v) c r s s ( p f ) vds vs. coss characteristics 0 20 40 60 80 100 0 10 20 30 vds(v) c o s s ( p f ) vds vs. ciss characteristics 0 10 20 30 40 50 60 0 10 20 30 vds(v) c i s s ( p f ) ta=+25c f=1mhz ta=+25c f=1mhz ta=+25c f=1mhz vds-ids characteristics 0 2 4 6 8 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=10v vgs=8v vgs=7v vgs=5v vgs=6v vgs=9v
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 4 typical characteristics pin-po characteristics 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 pin(w) p o u t ( w ) i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c f=30mhz vdd=12.5v idq=0.5a pin-po characteristics 0 10 20 30 40 50 -10 0 10 20 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=30mhz vdd=12.5v idq=0.5a po gp vdd-po characteristics 0 5 10 15 20 25 30 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 6 i d d ( a ) po idd ta=25c f=30mhz pin=0.4w idq=0.5a zg=zi=50 ohm vgs-ids characteristics 2 0 2 4 6 8 2 4 6 8 10 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 5 test circuit(f=30mhz) c1 220pf rf-in 1k ohm c1 c1 3 3 0 f , 5 0 v 8.2k ohm l1 c2 rf-out vgg vdd c1 1 0 0 p f , 0 . 0 2 2 f , 0 . 1 f i n p a r a l l e l c2 470pf*2 in parallel dimensions:mm note:board material ptfe substrate micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm c1 220pf 82pf 1 ohm 5 15 65 75 85 90 100 1.5 15 34 41 43 45 67 100pf 200pf 200pf c1 1 0 f , 5 0 v * 3 p c s 88pf 91 100 l1: 10 turns,i.d8mm,d0.9mm copper wire l2: 10 turns,i.d6mm,d1.6mm silver plateted copper wire l3: 9 turns,i.d5.6mm,d0.9mm copper wire l4: 4 turns,i.d5.6mm,d0.9mm ,p=0.5mm copper wire l5: 5 turns,i.d5.6mm,d0.9mm ,p=1mm copper wire l3 l4 l2 68pf 68pf 100pf 100pf l5 RD16HHF1
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 6 input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 30 20.02 - j 89.42 2.99 - j 3.66 po= 20 w, vdd=12.5v,pin= 0.4 w f=30mhz zout f=30mhz zin zo=50
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 7 RD16HHF1 s-parameter data (@vdd=12.5v, id=800ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10 0.928 -43.2 50.035 150.2 0.013 60.6 0.705 -44.6 30 0.761 -96.8 32.680 117.1 0.025 34.3 0.588 -92.6 50 0.676 -121.9 22.018 101.3 0.027 24.3 0.540 -116.9 100 0.650 -145.8 11.543 81.0 0.025 20.3 0.543 -138.4 150 0.679 -156.4 7.560 66.2 0.023 27.0 0.586 -147.1 200 0.709 -162.7 5.380 55.7 0.022 46.4 0.633 -153.2 250 0.742 -168.0 4.126 45.9 0.026 63.2 0.698 -158.1 300 0.775 -173.0 3.208 36.9 0.034 74.4 0.727 -163.2 350 0.801 -177.7 2.592 29.6 0.045 78.3 0.769 -168.0 400 0.826 177.7 2.133 22.6 0.056 78.4 0.805 -172.8 450 0.844 173.2 1.775 16.6 0.069 78.1 0.822 -176.8 500 0.861 169.0 1.509 11.3 0.081 75.3 0.851 178.9 550 0.874 164.8 1.283 5.9 0.093 73.1 0.867 174.7 600 0.884 160.7 1.114 2.1 0.104 69.8 0.877 170.9 650 0.892 156.9 0.974 -1.9 0.117 67.2 0.894 166.9 700 0.900 153.0 0.855 -5.3 0.129 63.7 0.897 163.4 750 0.903 149.1 0.759 -8.4 0.140 60.6 0.904 159.6 800 0.908 145.5 0.678 -11.3 0.150 56.8 0.914 155.9 850 0.912 141.7 0.614 -13.5 0.161 53.8 0.915 152.9 900 0.912 137.9 0.559 -15.3 0.172 50.4 0.917 149.0 950 0.913 134.3 0.509 -17.3 0.180 47.1 0.922 145.4 1000 0.913 130.7 0.467 -17.9 0.190 43.6 0.920 142.4 s11 s21 s12 s22
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discre te ) > RD16HHF1 rohs compliance, silicon mosfet power transistor 3 0mhz, 16 w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights r eserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the us e of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents informa tion on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi e lectric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubish i semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a tota l system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi ele ctric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semicon ductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of m itsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese gov ernment and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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